Graham F. Carey, The University of Texas at Austin, USA
Walter B. Richardson, The University of Texas at San Antonio, USA
Coke S. Reed, Supercomputing Research Center, Maryland, USA
B. Mulvaney,Motoroal, Austin, USA
Copyright 1996, John Wiley & Sons
ISBN 0-471-96019-5
Price US $95
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Order Form: http://www.wiley.com
Overview: This book presents for the first time a unified treatment of the
physical processes, mathematical models, and numerical techniques for circuit,
device, and process simulation. At the macroscopic level linear and nonlinear
elements are introduced to yield a mathematical model of an integrated
circuit.
Numerical techniques used to solve this coupled system of ODEs are described in
detail. Microscopically, current flow within a transistor is modeled using the
drift-diffusion and hydrodynamic PDE systems. Finite difference and finite
element methods for spatial discretizations are treated, as are grid
generation, refinement, upwinding, and multilevel schemes. At the
fabrication level, physical processes such as diffusion, oxidation,
and crystal growth are modeled using reaction-diffusion-convection equations.
These models require multistep integrator and Krylov projection methods for
successful implementation. Exercises, programming assignments, and an
extensive bibliography are included to reinforce and extend the
treatment